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Heteroepitaxial Growth of III-Vs Epilayer on Si Substrate by AP-MOCVD. Fundamental Epitaxy Research

Код 912209

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Аннотация к книге "Heteroepitaxial Growth of III-Vs Epilayer on Si Substrate by AP-MOCVD. Fundamental Epitaxy Research"

The III-V compound semiconductor is always relatively popular material due to its many interesting optical and electrical properties. On the other hand, there has been a longest evolution history of Si in the current semiconductor industries, a defect-free silicon material can be achieved technologically. The silicon material has many merits that can not be found in III-Vs, such as good heat dissipation capability, strong and not easy to crack, and the material can be purchased easily, etc....

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Издательство: Книга по требованию
Дата выхода: июль 2011
ISBN: 978-3-8364-8781-8
Объём: 112 страниц
Масса: 190 г
Размеры(высота, ширина, толщина), см: 23 x 16 x 1

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