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Novel Structural Polycrystalline Silicon Thin Film Transistor. Fabrication and Characterization of Polycrystalline Silicon Thin Film Transistor with Buried Insulator

Код 909673

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Аннотация к книге "Novel Structural Polycrystalline Silicon Thin Film Transistor. Fabrication and Characterization of Polycrystalline Silicon Thin Film Transistor with Buried Insulator"

This thesis is mainly surveyed the characteristics of polycrystalline silicon thin film transistor (TFT) putting forward and probing into four kinds of novel buried-oxide structures. With these structures, we can improve the shortcoming of the traditional polycrystalline silicon TFT, like leakage current (On/Off state current), subthreshold swing, floating body effect (kink effect), self-heating effect, and short channel effect etc.. Novel buried-oxide polysilicon thin-film transistors (poly-Si...

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Издательство: Книга по требованию
Дата выхода: июль 2011
ISBN: 978-3-6391-2987-8
Объём: 192 страниц
Масса: 313 г
Размеры(высота, ширина, толщина), см: 23 x 16 x 1

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