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Simulation Methodology to Compare Alternatives to Silicon Device. Ultra-thin body single-gate/double-gate,FinFET,tri- gate FDSOI MOSFET,Indium Antimonide MOSFET,Gallium Nitride MOSFET,which is future logic device?

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Аннотация к книге "Simulation Methodology to Compare Alternatives to Silicon Device. Ultra-thin body single-gate/double-gate,FinFET,tri- gate FDSOI MOSFET,Indium Antimonide MOSFET,Gallium Nitride MOSFET,which is future logic device?"

Practical realization of low-power, high-speed transistor technologies for future generation nano- electronics can be achieved with novel structures, such as FinFET, tri-gate or with the integration of exotic channel materials,such as Gallium Nitride (GaN), into Fully-Depleted SOI(FDSOI) transistor architectures. Novel Structures are the most promising candidates for logic devices with sub-20nm gate length. They can increase gate control and suppress short channel effects. To compare the...

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Издательство: Книга по требованию
Дата выхода: июль 2011
ISBN: 978-3-6391-0560-5
Объём: 188 страниц
Масса: 307 г
Размеры(высота, ширина, толщина), см: 23 x 16 x 1

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