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Tribological Phenomena in Chemical Mechanical Polishing. Fluid Pressure, Friction and Wear

Код 895889

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Аннотация к книге "Tribological Phenomena in Chemical Mechanical Polishing. Fluid Pressure, Friction and Wear"

Chemical Mechanical Polishing (CMP) is an indispensable step in the manufacturing of semiconductor integrated circuits. It can be used to remove a large variety of dielectric and metallization materials such as silicon, silicon oxide, tungsten, copper, aluminum and is currently the technique that can achieve unmatched global planarization of semiconductor wafers. In meeting the requirements for difficult to polish low-k materials, CMP is set to remain as a key process in the semiconductor...

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Издательство: Книга по требованию
Дата выхода: июль 2011
ISBN: 978-3-6391-8215-6
Объём: 136 страниц
Масса: 227 г
Размеры(высота, ширина, толщина), см: 23 x 16 x 1

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